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| p s bm404 5 ldc january 30,2015 - rev.00 page 1 ultra low vf schottky barrier rectifier voltage 45 v current 40 a f eatures ? ultra low forward voltage drop, low power loss ? high efficiency operation ? lead free in compliance with eu rohs 2011/65/eu directive mechanical data ? c ase: to - 263 package ? terminals: solder plated, solderable per mil - std - 750,method 2026 ? weight: 0.0 515 ounces, 1.46 grams. ? marking: part number note : 1. m ounted on infinite heatsink . maximum ratings and electrical characteristics ( t a =25 o c unless otherwise noted) parameter symbol limit unit maximum repetitive peak reverse voltage v rrm 45 v maximum rms voltage v rm s 32 v maximum dc blocking voltage v r 45 v maximum average forward rectified current per device per diode i f(av) 40 20 a peak forward surge current : 8.3ms single half sine - wave superimposed on rated load per diode i fsm 300 a typical junction capacitance ( v r =4v, f=1mhz ) c j 1100 pf typical thermal resistance (note 1) r j c 3 .5 o c /w operating junction temperature range t j - 55 to +150 o c storage temperature range t stg - 55 to +150 o c 0.409(10.4) 0.387(9.80) 0.110(2.8) 0.055(1.4) 0.039(1.0) 0.108(2.75) 0.092(2.35) 0.108(2.75) 0.092(2.35) 0 . 3 5 7 ( 9 . 1 ) 0 . 3 3 5 ( 8 . 5 ) 0 . 4 1 8 ( 1 0 . 6 ) 0 . 3 7 8 ( 9 . 6 0 ) 0.035(0.9)max. 0.189(4.8) 0.137(4.4) 0.055(1.4) 0.047(1.2) 0.026(0.7) 0.011(0.3) 0.236(6.0) 0.197(5.0) p s bm404 5 ldc january 30,2015-rev.00 page 2 electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol tes t condition min. typ. max. units breakdown voltage per diode v br i r =0. 5ma t j =25 o c 45 - - v instantaneous forward voltage per diode v f i f =1a i f = 5 a i f = 20 a t j =25 o c - - - 0.28 0.35 0. 4 7 - - 0. 5 1 v i f =1a i f = 5 a t j =125 o c - - 0.17 0. 27 - - v reverse current per diode i r v r = 36 v t j =25 o c t j =125 o c - - 86 20 - - ? ? ? 0 5 10 15 20 25 0 25 50 75 100 125 150 t c , case temperature ( c) i f , forward current (a) per diode 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 i r , reverse current (ma) percent of rated peak reverse voltage (%) t j = 25 c t j = 25 c t j = 25 c t j = 75 c t j = 125 c t j = 150 c fig.3 typical reverse characteristics fig.4 typical forward characteristics fig.1 forward current derating curve fig.2 typical junction capacitance 1 10 100 1000 1 10 100 c j , junction capacitance (pf) v r , reverse bias voltage (v) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 i f , forward current (a) v f , forward voltage (v) t j = 150 c t j = 125 c t j = 25 c t j = 75 c per diode per diode per diode p s bm404 5 ldc january 30,2015 - rev.00 page 3 B C mounting pad layout order information p s bm404 5 ldc january 30,2015 - rev.00 page 4 part no_packing code_v ersion s bm4045ldc _r 2 _00001 s bm4045ldc _r2_ 1 0001 for example : r b500v - 40 _ r2 _ 00 0 01 B serial number B B version code means hf part no. B packing size code means 13" B packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code tape and ammunition box (t/b) a n/a 0 hf 0 serial number tape and reel (t/r) r 7" 1 rohs 1 serial number bulk packing (b/p) b 13" 2 tube packing ( t/p) t 26mm x tape and reel (right oriented) (trr) s 52mm y tape and reel (left oriented) (trl) l panasert t/b cathode up (pbcu) u forming f panasert t/b cathode down (pbcd) d p s bm404 5 ldc january 30,2015 - rev.00 page 5 disclaimer |
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